光子晶体面发射激光器（PCSEL）利用二维光子晶体光栅的布拉格共振实现面发射激光，具有其独特的优势，包括单模性能、在片测试、高功率、低发散角等。相比垂直腔面发射激光器（VCSEL），PCSEL有将近两倍的有源区光限制因子，展现出高速运行的潜力。本文探讨了PCSEL的基本结构和工作原理，并详细分析了影响PCSEL激光器实现高速性能的关键因素。随后，文章系统地介绍了近年来研究者们为实现PCSEL高速性能所做的努力，重点聚焦于通过增强PCSEL的面内限制来缩小激光腔，并提供了相关的研究方向和指导。

In this paper, a patch-antenna-array enhanced quantum cascade detector with freely switchable operating modes among mid-wave, long-wave, and dual-color was proposed and discussed. The dual-color absorption occurs in a single active region through an optimized coupled miniband diagonal-transition subbands arrangement, and a successful separation of the operation regimes was realized by two nested antenna arrays with different patch sizes up to room temperature. At 77 K, the 5.7-μm channel achieved a peak responsivity of 34.6 mA/W and exhibited a detectivity of 2.0×1010 Jones, while the 10.0-μm channel achieved a peak responsivity of 87.5 mA/W, giving a detectivity of 5.0×1010 Jones. Under a polarization modulation of the incident light, the minimum cross talk of the mid-wave and the long-wave operating modes was 1:22.5 and 1:7.6, respectively. This demonstration opens a new prospect for multicolor infrared imaging chip integration technology.

Sharing the advantages of high optical power, high efficiency and design flexibility in a compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser sources for gas sensing, infrared spectroscopic, medical diagnosis, and defense applications. Metalorganic chemical vapor deposition (MOCVD) is an important technology for growing high quality semiconductor materials, and has achieved great success in the semiconductor industry due to its advantages of high efficiency, short maintenance cycles, and high stability and repeatability. The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices. This review summarizes the recent progress of QCLs grown by MOCVD. Material quality and the structure design together determine the device performance. Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

高功率650~660 nm波段激光器在可见光光电对抗领域具有重要作用，目前该波段光源由固体激光器通过半导体激光器泵浦并倍频输出，输出功率高、光束质量近衍射极限，但转换效率低。半导体激光器的转换效率高，但输出功率低，需要通过增加激光单元的方法提升功率，并通过激光合束的方式提升光束质量。文中提出外腔光谱合束的650 nm波段半导体激光器结构，通过实验验证可实现连续功率为7.3 W、光谱线宽为6.45 nm、电光转换效率为23.4%的650 nm波段激光输出，光束质量为M²_X=1.95，M²_Y=11.11，接近固体激光器，未来通过增加合束的激光单元数量并结合偏振合束可以获得更高功率的650 nm波段激光。

基于锑化物的带间级联激光器同时具有带间跃迁的高增益和级联结构的高量子效率，是中红外波段重要的相干光源，其功耗低于其它中红外半导体激光器，因而单模带间级联激光器在基于激光吸收光谱技术的高分辨气体检测和化学传感等领域具有很大的优势。目前利用Bragg光栅实现波长选择的单模分布反馈带间级联激光器已经实现商品化，但是，与同样有源区结构的Fabry-Pérot腔带间级联激光器最高600 mW的出光功率相比，单模功率最高55 mW，损耗较大。对几种不同结构的分布反馈带间级联激光器的性能进行对比分析，探讨这类单模中红外激光器损耗的主要来源以及改进思路。此外，介绍了垂直腔面发射和光子晶体带间级联激光器的进展，并与分布反馈带间级联激光器的性能进行比较，讨论其优缺点及适用的场景。

To facilitate the development of on-chip integrated mid-infrared multi-channel gas sensing systems, we propose a high-power dual-mode (7.01 and 7.5 μm) distributed feedback quantum cascade laser based on stacked 3D monolithic integration. Longitudinal mode control is achieved by preparing longitudinal nested bi-periodic compound one-dimensional Bragg gratings along the direction of the cavity length in the confinement layer. Additionally, transverse coherent coupling ridges perpendicular to the cavity length direction are fabricated in the upper waveguide layer to promote the fundamental transverse mode output when all ridges are in phase. Stable dual-wavelength simultaneous emission with a side-mode suppression ratio of more than 20 dB was achieved by holographic exposure and wet etching. The entire spectral tuning range covers nearly 100 nm through joint tuning of the injection current and heat-sink temperature. High peak power and beam quality are guaranteed by the parallel coherent integration of seven-element ridge arrays. The device operates in a fundamental supermode with a single-lobed far-field pattern, and its peak output power reaches 3.36 W in pulsed mode at 20°C. This dual-mode laser chip has the potential for in-situ on-chip simultaneous detection of CH4 and C2H6 gases in leak monitoring.

针对目前铜、金等金属材料加工的实际应用需求，开展了连续输出功率500 W的光纤耦合输出蓝光半导体激光加工光源研究。基于平面窗口TO封装的蓝光半导体激光单管器件，设计采用长后工作距的快轴准直镜和慢轴准直镜分别准直，获得低发散角、高光束质量的单元准直光束；结合二维空间合束、偏振合束和光纤耦合，将144个蓝光单管器件耦合进200 μm/NA 0.22光纤，通过ZEMAX软件对半导体激光光路进行光线追踪模拟；并从实验上实现，3 A电流驱动下，200 μm/NA 0.22光纤输出连续功率523 W，电光转换效率29 %。该激光光源具有直接加工铜、金等材料的能力。